Founded 1982 in West Germany to develop test
systems for reliability testing of POWER MOS devices with more than 10 years experience in
the Semiconductor industry. Moved 1992 to Czech Republic.
Our customer are semiconductor factories as well
as institutions like VDE. We offer test systems as well as testing of customer devices in
our test systems.
Our standard test
systems for power MOS, IGBT or bipolar devices :
1. HTRB / HTGS ( High Temperature Reverse Bias /
Gate Stress )
2. HTRB HV IGBT ( High Temperature Reverse Bias
for high voltage IGBT devices)
3. Dynamic HTRB ( high frequency system for
diodes and transistors )
4.
H3TRB ( 85%r.H.,85°C )
5.
IOL ( Intermittend Operating Life )
6.
RAT ( Repetitive Avalanche Test )
7.
Burn in ( Static or dynamic )
All our test
systems have following common features:
To get exact results, we measure in our test
systems with power load the junction temperature of each DUT.
Our test systems are equiped with many
controls, which minimize the possibility of operators mistake.
For Opto devices:
Life Test for VDE 0884
Pulse Life Test for LEDs
Ing. Buero s.r.o.,
Lozická 129, 190 16 Újezd nad Lesy - Praha 9, Czech republic